SP8M4TB Rohm Semiconductor, SP8M4TB Datasheet - Page 3

• Manufacturer Part Number: SP8M4TB
• Description: MOSFET N+P 30V 9A/7A 8-SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M4TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A, 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A, - 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Fall Time: 22 ns, 70 ns
• Rise Time: 15 ns, 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP8M4TBTR

Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
Q
Q
V
d (on)
d (off)
GSS
DSS
Y
Q
t
t
oss
SD
rss
iss
fs
r
f
gs
gd
g
Min.
−1.0
Min.
−30
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2600
Typ.
Typ.
450
350
110
5.5
20
25
30
20
50
70
25
10
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
−10
−1
28
35
42
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
DD
GS
= −1mA, V
= −7.0A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
L
G
= −7.0A
= −1.6A, V
=4.3Ω
=10Ω
= −20V, V
= −30V, V
= −10V, I
= −10V
=0V
= −10V
= −5V
−15V
Conditions
Conditions
GS
GS
GS
GS
GS
DS
DD
D
GS
DS
= −1mA
= −10V
=0V
=0V
= −10V
= −4.5V
= −4.0V
=0V
=0V
−15V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Rev.A
SP8M4
3/5