SP8M4TB Rohm Semiconductor, SP8M4TB Datasheet - Page 3
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SP8M4TB
Manufacturer Part Number
SP8M4TB
Description
MOSFET N+P 30V 9A/7A 8-SOIC
Manufacturer
Rohm Semiconductor
Datasheet
1.SP8M4TB.pdf
(6 pages)
Specifications of SP8M4TB
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A, 7A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A, - 7 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Fall Time
22 ns, 70 ns
Rise Time
15 ns, 50 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP8M4TBTR
Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
Q
Q
V
d (on)
d (off)
GSS
DSS
Y
Q
t
t
oss
SD
rss
iss
fs
r
f
gs
gd
g
Min.
−1.0
Min.
−30
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2600
Typ.
Typ.
450
350
110
5.5
20
25
30
20
50
70
25
10
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
−10
−1
28
35
42
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
DD
GS
= −1mA, V
= −7.0A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
= −3.5A, V
L
G
= −7.0A
= −1.6A, V
=4.3Ω
=10Ω
= −20V, V
= −30V, V
= −10V, I
= −10V
=0V
= −10V
= −5V
−15V
Conditions
Conditions
GS
GS
GS
GS
GS
DS
DD
D
GS
DS
= −1mA
= −10V
=0V
=0V
= −10V
= −4.5V
= −4.0V
=0V
=0V
−15V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Rev.A
SP8M4
3/5