IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet - Page 4

MOSFET N-CH 50V 3A 8-SOIC

IRF7103TRPBF

Manufacturer Part Number
IRF7103TRPBF
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7103TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
200 mOhms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7103PBFTR

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IRF7103QPbF
10000
4
1000
0.1
100
10
10
1
0.4
T = 175 C
1
Fig 7. Typical Source-Drain Diode
J
Fig 5. Typical Capacitance Vs.
V
SD
V DS , Drain-to-Source Voltage (V)
°
Drain-to-Source Voltage
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
0.8
= C gs + C gd , C ds
Crss
Ciss
Coss
T = 25 C
10
J
f = 1 MHZ
°
1.0
V
GS
= 0 V
SHORTED
1.2
100
0.01
100
0.1
10
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
0
0
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
=
2.0A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
3
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
DS
DS
DS
= 40V
= 25V
= 10V
10
6
www.irf.com
100µsec
1msec
10msec
100
9
1000
12

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