IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7103TRPBF
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7103TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.13Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 200 mOhms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7103PBFTR

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Fig 17. Gate Charge Test Circuit
60
48
36
24
12
0
25
Fig 16a. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
Vs. Drain Current
J
50KΩ
3mA
75
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
I
D
125
TOP
BOTTOM
+
-
V
DS
150
°
1.2A
2.5A
3.0A
I D
175
Fig 16c. Unclamped Inductive Test Circuit
Fig 16d. Unclamped Inductive Waveforms
I
AS
Fig 18. Basic Gate Charge Waveform
GS
R G
20V
V
V DS
G
t p
Q
t p
GS
IRF7103QPbF
I AS
D.U.T
0.01 Ω
L
V
Q
Charge
Q
(BR)DSS
GD
G
15V
DRIVER
+
-
V DD
7
A