IRF7307 International Rectifier, IRF7307 Datasheet - Page 4

• Manufacturer Part Number: IRF7307
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7307

IRF7307
Fig 7. Typical Source-Drain Diode
Fig 11a. Gate Charge Test Circuit
Fig 9. Maximum Drain Current Vs.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1 0 0
0 . 1
1 0
1
25
12V
0 . 0
V
GS
Ambient Temperature
Same Type as D.U.T.
T = 150° C
V
J
Forward Voltage
Current Regulator
50
SD
T , Case Temperature
0 . 5
.2 F
C
, Sour ce-to-Dr ain Voltage ( V)
T = 25°C
50K
3mA
J
75
1 . 0
Current Sampling Resistors
.3 F
I
100
G
1 . 5
( C)
125
°
D.U.T.
2 . 0
V
G S
I
D
= 0V
150
2 . 5
+
A
-
V
DS
N-Channel
Fig 11b. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
4.5V
V
90%
10%
V
Fig 8. Maximum Safe Operating Area
DS
GS
V
G
100
R
10
Pulse Width
Duty Factor
1
0.1
G
Q
4.5V
t
T
T
Single Pulse
d(on)
V
GS
A
J
GS
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
V
DS
V
°
DS
t
, Drain-to-Source Voltage (V)
r
Q
Charge
µs
Q
1
GD
G
BY R
DS(on)
D.U.T.
R
10
t
D
d(off)
100us
1ms
10ms
t
f
+
100
-
V
DD