IRF7307 International Rectifier, IRF7307 Datasheet - Page 6

• Manufacturer Part Number: IRF7307
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7307

IRF7307
Fig 18. Typical Source-Drain Diode
Fig 20. Maximum Drain Current Vs.
Fig 22a. Gate Charge Test Circuit
1 0 0
0 . 1
1 0
5.0
4.0
3.0
2.0
1.0
0.0
1
12V
0 . 3
25
V
GS
Ambient Temperature
Same Type as D.U.T.
- V
Current Regulator
SD
Forward Voltage
50
T , Case Temperature
.2 F
0 . 6
C
, Sour ce-to-Drain V oltage (V)
T = 150°C
J
50K
-3mA
75
Current Sampling Resistors
0 . 9
.3 F
I
G
T = 25° C
100
J
1 . 2
( C)
125
D.U.T.
V
°
G S
I
D
= 0 V
1 . 5
150
A
+
-
V
DS
P-Channel
Fig 19. Maximum Safe Operating Area
Fig 22b. Basic Gate Charge Waveform
-4.5V
Fig 21a. Switching Time Test Circuit
Fig 21b. Switching Time Waveforms
V
90%
10%
V
DS
GS
V
G
100
R
Pulse Width
Duty Factor
10
1
G
Q
-4.5V
1
t
d(on)
GS
Single Pulse
T
T
V
A
J
= 25 C °
= 150 C
GS
-V
OPERATION IN THIS AREA LIMITED
V
DS
°
DS
t
r
, Drain-to-Source Voltage (V)
Q
Charge
Q
µs
GD
G
BY R
10
DS(on)
D.U.T.
R
1ms
10ms
D
t
d(off)
t
f
+
-
100
V
DD