SSM6P35FE(TE85L,F) Toshiba, SSM6P35FE(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: SSM6P35FE(TE85L,F)
• Description: MOSFET DUAL P-CH 20V .1A ES6
• Manufacturer: Toshiba

Specifications of SSM6P35FE(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 12.2pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6P35FE(TE85LF)TR

10000
1000
1000
0.01
-0.8
-0.6
-0.4
-0.2
100
100
0.1
10
10
-1
−50
0
1
-0.1
0
G
Common Source
V GS = 0 V
t on
t off
t r
t f
0.2
Ta=100℃
Drain–source voltage V
Ambient temperature Ta (°C)
D
S
Drain current I
-1
0
0.4
I DR
I
0.6
DR
V
th
t – I
-10
– V
50
– Ta
-25°C
D
0.8
DS
D
25°C
(mA)
Common Source
I D = -1 mA
V DS = -3 V
DS
Common Source
V DD = -3 V
V GS = 0 to -2.5 V
Ta = 25°C
1
-100
100
(V)
1.2
-1000
150
1.4
4
*:Total Rating
1000
150
100
100
250
200
100
10
50
10
1
0
1
-0.1
-1
0
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
20
Drain–source voltage V
Ambient temperature Ta (°C)
Drain current I
40
-10
-1
60
P
⎪Y
C – V
D
fs
*– Ta
80
⎪ – I
DS
D
D
100
-100
-10
(mA)
DS
Common Source
V DS = -3 V
Ta = 25°C
120
SSM6P35FE
C oss
C iss
C rss
(V)
140
2
2008-03-14
× 6)
-1000
-100
160