NTZD3152PT1G ON Semiconductor, NTZD3152PT1G Datasheet
NTZD3152PT1G
Specifications of NTZD3152PT1G
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NTZD3152PT1G Summary of contents
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... 260 °C L Symbol Max Unit Device 500 °C/W R NTZD3152PT1G qJA 447 NTZD3152PT1H NTZD3152PT5G NTZD3152PT5H †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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TYPICAL PERFORMANCE CURVES 25° − −1 −1 0.6 −1.4 V 0.4 −1.2 V 0.2 − −V , ...
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TYPICAL PERFORMANCE CURVES 250 200 C 150 ISS 100 C OSS 50 C RSS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 t d(off ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...