NTZD3152PT1G ON Semiconductor, NTZD3152PT1G Datasheet - Page 3

• Manufacturer Part Number: NTZD3152PT1G
• Description: MOSFET 2P-CH 20V 430MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 175pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.43 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3152PT1GOSTR

0.75
0.65
0.55
0.45
0.8
0.6
0.4
0.2
0.8
0.7
0.6
0.5
0.4
1
0
1.6
1.4
1.2
0.8
0.6
0
1
1
−50
Figure 3. On−Resistance vs. Gate−to−Source
−V
1
I
V
−V
D
GS
Figure 1. On−Region Characteristics
DS
= −0.43 A
−25
GS
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
V
2
GS
GS
T
J
= −1.8 V
, JUNCTION TEMPERATURE (°C)
= −2 V
3
0
TYPICAL PERFORMANCE CURVES
4
3
25
Voltage
Temperature
5
50
T
−1.6 V
−1.4 V
−1.2 V
6
J
−1 V
4
= 25°C
75
7
I
T
D
J
100
8
= −0.43 A
= 25°C
5
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9
125
10
6
150
3
10000
1000
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
(T
10
1
0
0.1
J
Figure 4. On−Resistance vs. Drain Current and
2
0
= 25°C unless otherwise noted)
T
V
Figure 6. Drain−to−Source Leakage Current
V
J
GS
DS
= 25°C
0.2
−V
−V
4
= 0 V
≥ −10 V
DS
GS
Figure 2. Transfer Characteristics
0.5
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.3
−I
6
D,
25°C
T
DRAIN CURRENT (AMPS)
J
= −55°C
0.4
8
V
V
Gate Voltage
GS
GS
vs. Voltage
1
T
T
0.5
= −1.8 V
= −2.5 V
10
J
J
= 150°C
= 100°C
100°C
0.6
12
1.5
0.7
14
16
0.8
2
0.9
18
1.0
2.5
20