AO6602 Alpha & Omega Semiconductor Inc, AO6602 Datasheet - Page 4

• Manufacturer Part Number: AO6602
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6602

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1077-2

Rev 5: Mar 2011
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
1.0
0.1
0.0
10
8
6
4
2
0
0.001
0.01
0.01
0
0.1
10
0.00001
1
V
I
D
R
limited
DS
=3.5A
DS(ON)
=15V
D=T
T
R
T
T
J,PK
Figure 7: Gate-Charge Characteristics
Figure 9: Maximum Forward Biased Safe
JA
J(Max)
A
=25° C
=150° C/W
on
=T
1
/T
0.1
A
=150° C
+P
0.0001
DM
Operating Area (Note F)
.Z
JA
2
V
.R
DS
Q
Single Pulse
g
JA
(Volts)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
(nC)
0.001
DC
3
10
4
0.01
www.aosmd.com
100 s
10ms
10 s
1ms
10s
100
Pulse Width (s)
5
0.1
1000
300
250
200
150
100
100
50
10
0.00001
0
1
0
C
rss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 8: Capacitance Characteristics
5
1
Figure 10: Single Pulse Power Rating
C
0.001
oss
Junction-to-Ambient (Note F)
10
P
D
Pulse Width (s)
T
V
10
on
DS
0.1
(Volts)
15
T
C
iss
T
20
A
100
=25° C
10
25
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AO6602
1000
1000
30