AO4616 Alpha & Omega Semiconductor Inc, AO4616 Datasheet - Page 2
![MOSFET N/P-CH COMPL 30V 8-SOIC](/photos/5/43/54367/ao4616_sml.jpg)
AO4616
Manufacturer Part Number
AO4616
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4616.pdf
(9 pages)
Specifications of AO4616
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 8.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.1A, 7.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19.2nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1043-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO4616
Manufacturer:
SILICON
Quantity:
2 500
Part Number:
AO4616
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4616A
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4616L
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 2: Jan. 2011
N-Channel Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation P
C. Repetitive rating, pulse width limited by junction temperature T
initialT
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2oz. Copper, assuming a maximum junction temperature of T
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
J
=25° C.
JA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
is measured with the device mounted on 1in
D
is based on T
Parameter
J(MAX)
=150° C, using ≤ 10s junction-to-ambient thermal resistance.
J
=25° C unless otherwise noted)
J(MAX)
www.aosmd.com
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
J(MAX)
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=1A,V
GEN
=8A, dI/dt=500A/ s
=8A, dI/dt=500A/ s
=250 A, V
FR-4 board with 2oz. Copper, in a still air environment with T
=150° C. The SOA curve provides a single pulse ratin g.
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3
=150° C. Ratings are based on low frequency and duty cycles to keep
GS
JL
GS
and lead to ambient.
I
D
D
=0V
GS
DS
DS
=8A
D
=250 A
D
GS
DS
DS
DS
=8A
GS
=±16V
=6A
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
=8A
L
T
=1.8 ,
T
J
=125° C
J
=55° C
Min
600
1.2
0.5
30
40
77
50
12
14
6
6
16.5
19.5
0.75
Typ
740
110
23
1.8
1.1
7.5
2.5
3.5
3.5
30
82
15
19
18
3
5
8
2
A
FR-4 board with
=25° C. The value
Max
888
145
115
28
2.4
2.5
1.7
10
20
28
18
10
22
5
1
1
9
AO4616
Page 2 of 9
Units
m
m
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A
A