AO4932 Alpha & Omega Semiconductor Inc, AO4932 Datasheet - Page 5

• Manufacturer Part Number: AO4932
• Description: MOSFET DUAL N-CH 30V 9A ASYM SO8
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SRFET™r

Specifications of AO4932

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.8 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1885pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1065-2

Rev 3: Dec 2010
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-01
1.E-01
1.E-02
1.E-02
1.E-03
1.E-03
1.E-04
1.E-04
1.E-05
1.E-05
1.E-06
1.E-06
25
20
15
10
30
30
25
25
20
20
15
15
10
10
5
0
5
5
0
0
Figure 16: Diode Reverse Recovery Charge and Peak
Figure 14: Diode Reverse Recovery Charge and Peak
Figure 14: Diode Reverse Recovery Charge and Peak
0
0
0
Figure 12: Diode Reverse Leakage Current vs.
Figure 12: Diode Reverse Leakage Current vs.
0
0
di/dt=800A/ s
di/dt=800A/ s
I
I
Q
Q
rm
rm
I
s
rr
rr
=20A
Q
I
rm
rr
5
5
200
V
V
DS
DS
Current vs. Conduction Current
50
50
Junction Temperature
Junction Temperature
=24V
=24V
Temperature (° C)
Temperature (° C)
10
10
400
Current vs. di/dt
di/dt (A/ s)
100
100
15
15
I
I
S
S
(A)
(A)
600
V
V
125ºC
125ºC
DS
DS
125ºC
125ºC
25ºC
25ºC
25ºC
25ºC
20
20
=12V
=12V
150
150
800
125ºC
25ºC
125ºC
25ºC
25
25
www.aosmd.com
1000
30
30
200
200
10
8
6
4
2
0
12
12
10
10
8
8
6
6
4
4
2
2
0
0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
15
12
16
16
14
14
12
12
10
10
9
6
3
0
1
1
0
0
8
8
6
6
4
4
2
2
0
0
0
0
0
0
0
40
Figure 17: Diode Reverse Recovery Time and
Figure 15: Diode Reverse Recovery Time and
Figure 15: Diode Reverse Recovery Time and
Figure 13: Diode Forward voltage vs. Junction
Figure 13: Diode Forward voltage vs. Junction
di/dt=800A/ s
di/dt=800A/ s
Softness Factor vs. Conduction Current
t
t
S
S
rr
rr
200
5
5
Softness Factor vs. di/dt
50
50
25ºC
10
10
125º
Temperature (° C)
Temperature (° C)
125ºC
25ºC
400
di/dt (A/ s)
Temperature
Temperature
I
I
125ºC
125ºC
S
S
25ºC
25ºC
15
15
100
100
(A)
(A)
600
I
I
S
S
=1A
=1A
5A
5A
125ºC
125ºC
20A
20A
25ºC
25ºC
20
20
150
150
800
I
10A
10A
s
25
25
t
S
=20A
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rr
AO4932
1000
30
30
200
200
2.5
2
1.5
1
0.5
0
3
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
0