SSM6P15FE(TE85L,F) Toshiba, SSM6P15FE(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: SSM6P15FE(TE85L,F)
• Description: MOSFET DUAL P-CH 30V .1A ES6
• Manufacturer: Toshiba

Specifications of SSM6P15FE(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.7V @ 100µA
• Input Capacitance (ciss) @ Vds: 9.1pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6P15FE(TE85LF)TR

1000
100
100
250
200
150
100
10
10
50
1
1
0
-0.1
-1
*: Total Rating
0
20
Drain-Source voltage VDS (V)
40
-10
Drain current ID (mA)
Ambient temperature Ta(°C)
-1
|Yfs| - ID
C - VDS
60
PD* - Ta
mounted on FR4 board
(25.4mm×25.4mm×1.6t
Cu Pad:0.135mm
80
Common Source
Common Source
VDS= -3V
Ta=25°C
-100
-10
100
VGS=0V
f=1MHz
Ta=25°C
120
2
×5)
Ciss
Coss
Crss
140
-1000
-100
160
4
10000
-250
-200
-150
-100
1000
-50
100
10
0
-0.1
0
Common Source
VGS=0V
Ta=25°C
tf
ton
0.2
tr
toff
Drain-Source voltage VDS (V)
0.4
Drain Current ID (mA)
-1
IDR - VDS
0.6
t - ID
0.8
Common Source
SSM6P15FE
VDD= -5V
VGS=0~-5V
Ta=25°C
-10
2007-11-01
1
1.2
-100
1.4