SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.0
0.0
2
1
10
-4
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
Single Pulse
0.5
On-Resistance vs. Drain Current
0.2
V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
1.0
I
D
= 2.5 V
0.4
- Drain Current (A)
10
V
1.5
GS
-3
V
1 V
GS
= 4.5 V
0.6
= 5 V thru 3 V
Normalized Thermal Transient Impedance, Junction-to-Foot
2.0
1.5 V
2.5 V
2 V
V
0.8
GS
2.5
= 2.7 V
Square Wave Pulse Duration (s)
10
1.0
3.0
-2
10
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
-1
0
0.0
0
C
rss
0.5
4
V
V
GS
Transfer Characteristics
C
DS
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.0
Capacitance
8
1
1.5
C
Vishay Siliconix
iss
T
12
C
25 °C
= - 55 °C
2.0
Si1551DL
www.vishay.com
16
2.5
125 °C
1
0
3.0
20
5