SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

Si1551DL
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
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- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
5
4
3
2
1
0
1
- 50
0.0
0.0
V
I
D
- 25
DS
Source-Drain Diode Forward Voltage
= 0.41 A
0.2
0.1
= 10 V
V
SD
0
Q
-
g
Threshold Voltage
0.2
0.4
T
S
T
- Total Gate Charge (nC)
J
J
o
Gate Charge
25
- Temperature (°C)
u
= 150 °C
c r
e
t -
- o
0.3
0.6
50
D
a r
I
n i
D
= 250 µA
75
V
o
0.4
0.8
a t l
g
e
100
T
(
) V
J
= 25 °C
0.5
1.0
125
150
0.6
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
- 50
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
V
I
On-Resistance vs. Junction Temperature
- 25
D
GS
I
D
= 0.41 A
10
= 0.41 A
= 4.5 V
-2
1
V
GS
0
T
J
Single Pulse Power
10
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
-1
25
2
Time (s)
50
S10-0935-Rev. D, 19-Apr-10
1
Document Number: 71255
3
75
10
100
4
100
125
150
600
5