SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

Document Number: 71255
S-42353—Rev. C, 20-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
V
= 0.29 A
GS
0.5
0.1
= 10 V
On-Resistance vs. Drain Current
V
= 2.5 V
DS
0.2
Q
Output Characteristics
g
− Drain-to-Source Voltage (V)
1.0
I
0.2
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
V
1.5
0.3
0.4
GS
= 2.7 V
V
GS
2.0
= 5 thru 3.5 V
0.4
V
0.6
GS
= 4.5 V
2.5
0.5
2.5 V
1.5 V
3 V
2 V
3.0
0.6
0.8
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0
−50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
D
−25
rss
0.5
GS
= 0.29 A
= 4.5 V
4
V
T
GS
V
1.0
0
J
DS
Transfer Characteristics
C
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
1.5
Capacitance
8
Vishay Siliconix
C
50
2.0
T
iss
25_C
C
= −55_C
12
75
2.5
Si1551DL
N−CHANNEL
100
3.0
125_C
16
www.vishay.com
125
3.5
150
20
4.0
3