SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

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Si1551DL
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.1
−0.2
−0.3
0.2
0.1
0.1
0.01
1
0.1
−50
0.0
2
1
10
−4
Source-Drain Diode Forward Voltage
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
0
Single Pulse
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
− Temperature (_C)
J
25
10
= 150_C
−3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
T
−2
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
−1
1
6
5
4
3
2
1
0
5
4
3
2
1
0
10
0
−3
On-Resistance vs. Gate-to-Source Voltage
10
−2
1
V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
10
DM
JM
− Gate-to-Source Voltage (V)
Single Pulse Power
−1
− T
Time (sec)
2
t
1
A
= P
t
2
DM
1
Z
S-42353—Rev. C, 20-Dec-04
thJA
100
thJA
t
t
Document Number: 71255
3
1
2
(t)
=400_C/W
10
N−CHANNEL
I
D
= 0.29 A
4
100
600
600
5