AO4622 Alpha & Omega Semiconductor Inc, AO4622 Datasheet - Page 6

• Manufacturer Part Number: AO4622
• Description: MOSFET N/P-CH COMPL 20V 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4622

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A, 5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1046-2

AO4622
Alpha & Omega Semiconductor, Ltd.
A: The value of R
A: The value of R
value in any given application depends on the user's specific board design.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
resistance rating.
C. The R
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev4: Nov 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
DS(ON)
SD
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
θJA
θJA
is the sum of the thermal impedence from junction to lead R
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
θJA
is measured with the device mounted on 1in
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
R
I
D
S
F
F
FR-4 board with 2oz. Copper, in a still air environment with T
FR-4 board with 2oz. Copper, in a still air environment with T
V
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
=-1A,V
GEN
=-5A, dI/dt=100A/μs
=-5A, dI/dt=100A/μs
=-250μA, V
2
2
GS
FR-4 board with 2oz. Copper, in a still air environment with T
FR-4 board with 2oz. Copper, in a still air environment with T
=-16V, V
=0V, V
=V
=-4.5V, V
=-4.5V, I
=-2.5V, I
=-5V, I
=0V, V
=0V, V
=-4.5V, V
=3Ω
=-4.5V, V
GS
θJL
θJL
GS
I
D
and lead to ambient. R
and lead to ambient.
D
GS
DS
DS
=0V
=-250μA
=-5A
D
D
GS
=±12V
=-10V, f=1MHz
=0V, f=1MHz
GS
DS
DS
=-5A
=-4.2A
DS
=0V
=0V
=-5V
=-10V, R
=-10V, I
T
L
D
=2Ω,
T
J
=-4.5A
=125°C
J
=55°C
θJL
and R
Min
-1.3
θJC
-20
-25
are equivalent terms referring to
-0.76
15.5
13.5
Typ
-0.9
800
131
103
6.7
7.4
1.3
2.9
4.4
7.6
≤ 10s thermal
44
59
67
13
44
20
9
A
A
=25°C. The SOA
=25°C. The
www.aosmd.com
A
A
±100
Max
-0.5
-2.5
960
=25°C. The
=25°C.
53
71
87
10
-1
-5
-1
Units
mΩ
mΩ
μA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A