BSO211P Infineon Technologies, BSO211P Datasheet - Page 4

• Manufacturer Part Number: BSO211P
• Description: MOSFET DUAL P-CH 20V 4.7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 23.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.067 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO211PINTR

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev.1.2
-10
-10
-10
-10
-10
= f (T
W
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
1
0
2
1
0
-10
0
BSO211P
BSO211P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
DC
120
1
t p = 41.0µs
100 µs
1 ms
10 ms
°C
V
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJS
= f (T
K/W
10
10
10
10
-5.5
-4.5
-3.5
-2.5
-1.5
-0.5
10
10
10
A
-4
-3
-2
-1
= f (t
-1
-2
-3
-4
0
2
1
0
10
0
A
BSO211P
BSO211P
-7
)
p
20
10
)
single pulse
-6
GS
40
10
|≥ 4.5 V
p
/T
-5
60
10
-4
80
10
100
-3
10
2002-01-22
120
BSO211P
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0