BSO615N G Infineon Technologies, BSO615N G Datasheet

BSO615N G

Manufacturer Part Number

BSO615N G

Description

MOSFET DUAL N-CH 60V 2.6A 8-SOIC

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSO615N_G.pdf (8 pages)

Specifications of BSO615N G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

150 mOhm @ 2.6A, 4.5V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

2.6A

Vgs(th) (max) @ Id

2V @ 20µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

380pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSO615N G
BSO615NGT
BSO615NGXT
BSO615NT
BSO615NXTINTR
BSO615NXTINTR
SP000216316

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° Pb-free lead plating; RoHS compliant

Marking

615N

2007-02-21

Rev. 1.1

Page 1

Related parts for BSO615N G

BSO615N G Summary of contents

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