SI8901EDB-T2-E1 Vishay, SI8901EDB-T2-E1 Datasheet - Page 2

• Manufacturer Part Number: SI8901EDB-T2-E1
• Description: MOSFET BIDIR P-CH 20V 2X3 6-MFP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8901EDB-T2-E1

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 6-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8901EDB-T2-E1TR

Si8901EDB
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Source Current
On-State Source Current
Source1- Source2 On-State Resistance
Forward Transconductance
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
10
8
6
4
2
0
0
Gate-Current vs. Gate-Source Voltage
I
GSS
3
a
V
at 25 °C (mA)
a
GS
J
- Gate-to-Source Voltage (V)
= 25 °C, unless otherwise noted
6
a
R
Symbol
V
S1S2(on)
9
I
I
t
t
I
GS(th)
S1S2
S(on)
d(on)
d(off)
GSS
g
t
t
fs
r
f
12
I
SS
V
SS
≅ - 1 A, V
= - 20 V, V
V
V
V
V
V
V
15
V
V
V
V
SS
SS
SS
GS
GS
GS
SS
SS
SS
SS
Test Conditions
= - 5 V, V
= V
= 0 V, V
= 0 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 10 V, I
= - 20 V, V
= - 10 V, R
GEN
GS
GS
, I
= - 4.5 V, R
D
GS
GS
= 0 V, T
GS
= - 350 µA
SS
SS
SS
SS
= ± 4.5 V
GS
L
= ± 12 V
= - 4.5 V
= 10 Ω
= - 1 A
= - 1 A
= - 1 A
= - 1 A
= 0 V
10 000
J
1000
0.01
= 85 °C
100
0.1
10
g
1
= 6 Ω
0
T
Gate Current vs. Gate-Source Voltage
J
= 150 °C
3
- 0.45
V
Min.
- 5
GS
- Gate-to-Source Voltage (V)
T
J
6
= 25 °C
0.048
0.062
0.081
Typ.
2.3
2.2
1.3
7
9
S-82119-Rev. C, 08-Sep-08
Document Number: 72941
9
0.060
0.080
0.105
Max.
- 1.0
± 10
± 4
3.5
3.5
- 1
- 5
14
2
12
Unit
mA
µA
µA
µs
Ω
V
A
S
15