SI8901EDB-T2-E1 Vishay, SI8901EDB-T2-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8901EDB-T2-E1
• Description: MOSFET BIDIR P-CH 20V 2X3 6-MFP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8901EDB-T2-E1

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 6-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8901EDB-T2-E1TR

Si8901EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
30
25
20
15
10
0.01
5
0
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
Single Pulse Power, Junction-to-Ambient
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
Single Pulse
1
Time (s)
10 -
3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
3
10 -
100
2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
1000
10 -
1
10 -
2
0.001
0.01
100
0.1
10
1
1
0.1
* V
by R
Limited
GS
Single Pulse
DS(on)
T
> minimum V
C
= 25 °C
V
DS
*
Safe Operating Area
10
- Drain-to-Source Voltage (V)
10 -
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
1
DM
1
JM
GS
-
T
t
at which R
A
1
= P
S-82119-Rev. C, 08-Sep-08
t
2
Document Number: 72941
DM
Z
thJA
thJA
100
t
t
DS(on)
10
1
2
(t)
= 95 °C/W
is specified
DC, 100 s
10 µs, 100 µs
1 ms
10 ms
100 ms
1 s
10 s
600
1
100