SI7949DP-T1-E3 Vishay, SI7949DP-T1-E3 Datasheet

MOSFET DUAL P-CH 60V 8-SOIC

SI7949DP-T1-E3

Manufacturer Part Number
SI7949DP-T1-E3
Description
MOSFET DUAL P-CH 60V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7949DP-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
64 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.064 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.2 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7949DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7949DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73130
S09-0223-Rev. B, 09-Feb-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 60
(V)
8
D1
0.080 at V
6.15 mm
0.064 at V
7
D1
R
Si7949DP-T1-E3 (Lead (Pb)-free)
Si7949DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
6
D2
PowerPAK SO-8
GS
Bottom View
GS
5
= - 4.5 V
(Ω)
D2
= - 10 V
J
a
= 150 °C)
a
Dual P-Channel 60-V (D-S) MOSFET
1
S1
2
G1
a
I
D
- 4.5
- 5
3
(A)
S2
5.15 mm
4
a
G2
b,c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
(Typ.)
26
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
Symbol
Symbol
T
R
G
R
J
Available
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
1
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
P-Channel MOSFET
stg
D
S
®
1
1
Power MOSFET
Typical
- 2.9
10 s
3.5
2.2
3.3
- 5
- 4
27
60
G
- 55 to 150
2
P-Channel MOSFET
± 20
24.2
- 60
- 25
260
22
Steady State
Maximum
D
S
- 3.2
- 2.6
- 1.2
0.94
1.5
4.3
2
2
36
85
Vishay Siliconix
Si7949DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI7949DP-T1-E3

SI7949DP-T1-E3 Summary of contents

Page 1

... S1 6. Bottom View Ordering Information: Si7949DP-T1-E3 (Lead (Pb)-free) Si7949DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7949DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73130 S09-0223-Rev. B, 09-Feb-09 1800 1500 1200 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 °C J 0.8 1.0 1.2 Si7949DP Vishay Siliconix C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si7949DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 250 µA 0.8 D 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited DS(on 0 °C A Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73130. Document Number: 73130 S09-0223-Rev. B, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7949DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords