SI7949DP-T1-E3 Vishay, SI7949DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7949DP-T1-E3
• Description: MOSFET DUAL P-CH 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7949DP-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.064 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7949DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73130
S09-0223-Rev. B, 09-Feb-09
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
40
10
8
4
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 5 A
5
On-Resistance vs. Drain Current
10
= 30 V
V
SD
V
Q
GS
- Source-to-Drain Voltage (V)
g
0.4
10
I
- Total Gate Charge (nC)
D
= 4.5 V
- Drain Current (A)
T
Gate Charge
20
J
= 150 °C
0.6
15
30
0.8
20
V
GS
= 10 V
T
J
40
= 25 °C
1.0
25
1.2
50
30
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1800
1500
1200
0.30
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
- 50
0
0
0
C
On-Resistance vs. Junction Temperature
rss
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 5 A
10
= 10 V
T
2
0
V
J
V
DS
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
20
2 5
oss
Capacitance
C
4
iss
5 0
30
I
D
Vishay Siliconix
= 5 A
7 5
6
Si7949DP
40
100
www.vishay.com
8
125
50
150
60
10
3