FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 4
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FDS8958A
Manufacturer Part Number
FDS8958A
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS8958A.pdf
(8 pages)
Specifications of FDS8958A
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 7 A / - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8958ATR
FDS8958A_NL
FDS8958A_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
FSC
Quantity:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Typical Characteristics: Q1 (N-Channel)
20
16
12
20
16
12
8
4
0
8
4
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
DS
V
= 5V
V
GS
GS
I
6.0V
D
-25
= 10.0V
= 10.0V
= 7A
2
V
0.5
GS
V
T
DS
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
2.5
25
T
4.0V
A
= 125
1
50
o
C
3
75
25
-55
o
3.5V
C
3.0V
1.5
100
o
o
C)
C
3.5
125
150
4
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.01
100
0.1
10
2.2
1.8
1.4
0.6
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
0
V
T
Drain Current and Gate Voltage.
GS
A
V
= 25
= 0V
GS
= 3.5V
o
Gate-to-Source Voltage.
0.2
C
V
SD
4.0
4
V
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
T
= 125
A
0.4
4.5V
I
= 125
D
, DRAIN CURRENT (A)
o
C
o
8
C
5.0
0.6
6
25
o
C
12
6.0V
0.8
-55
8
FDS8958A Rev F3 (W)
10.0V
o
C
16
I
D
1
= 3.5A
1.2
20
10