FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 7

• Manufacturer Part Number: FDS8958A
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8958A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: + 7 A / - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958ATR; FDS8958A_NL

Typical Characteristics: Q2 (P-Channel)
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.001
0.01
SINGLE PULSE
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
Figure 23. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
1
10
P(pk)
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
J A
100
(t) = r(t) * R
= 135 °C/W
A
t
t
1
1
= P * R
t
t
2
2
FDS8958A Rev F3 (W)
J A
1
A
(t)
/ t
2
1000