FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 7
![MOSFET N/P-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS8958A
Manufacturer Part Number
FDS8958A
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS8958A.pdf
(8 pages)
Specifications of FDS8958A
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 7 A / - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8958ATR
FDS8958A_NL
FDS8958A_NL
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Part Number
Manufacturer
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Price
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Typical Characteristics: Q2 (P-Channel)
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.001
0.01
SINGLE PULSE
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
Figure 23. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
1
10
P(pk)
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
J A
100
(t) = r(t) * R
= 135 °C/W
A
t
t
1
1
= P * R
t
t
2
2
FDS8958A Rev F3 (W)
J A
1
A
(t)
/ t
2
1000