SI4501ADY-T1-E3 Vishay, SI4501ADY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4501ADY-T1-E3
• Description: MOSFET N/P-CH HALF BRG 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Common Quad Drain
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 6.3 A @ N Channel or 4.1 A @ P Channel
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-E3TR

Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71922.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
10
- 3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
- 2
10
- 1
1
10
- 1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
= P
1
S-61005-Rev. B, 12-Jun-06
t
2
Document Number: 71922
DM
Z
thJA
thJA
100
t
t
(t)
1
2
= 75 °C/W
600
10