BSO203P Infineon Technologies, BSO203P Datasheet - Page 5

• Manufacturer Part Number: BSO203P
• Description: MOSFET DUAL P-CH 20V 8.2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO203P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 1.2V @ 100µA
• Gate Charge (qg) @ Vgs: 48.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2242pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO203PINTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
Rev.1.2
A
A
90
70
60
50
40
30
20
10
35
25
20
15
10
0
5
0
0
0
DS
GS
); T
); |V
0.5
p
p
= 80 µs
2
= 80 µs
j
Vgs = -3.5V
=25°C
DS
|≥ 2 x |I
1
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
4
1.5
D
| x R
6
2
Vgs = -2.5V
Vgs = -3V
Vgs = -2V
DS(on)max
V
V
- V
- V
DS
GS
10
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
0.015
0.005
= f(I
0.03
0.02
0.01
Ω
S
60
40
30
20
10
0
0
0
0
D
= f (I
); T
5
Vgs = -2.5V
5
j
=25°C
D
GS
10
)
10
15
20
15
25
Vgs = -4V
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -8V
Vgs = -10V
20
30
Vgs = -3V
35
25
2002-01-08
BSO203P
Vgs = -3.5V
40
A
- I
- I
A
D
D
35
50