SI4816BDY-T1-E3 Vishay, SI4816BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4816BDY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-E3TR

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
4
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
100
0.1
10
10 -
1
0.1
2
Limited by R
* V
Limited
I
GS
D(on)
Single Pulse
T
>
C
V
= 25 °C
minimum V
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
DS
10 -
DS(on)
Safe Operating Area
2
–
10 -
1
Drain-to-Source Voltage (V)
*
1
GS
BVDSS Limited
at which R
DS(on)
10
10 -
1
I
is specified
1
DM
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
1
A
1
= P
t
Vishay Siliconix
2
DM
Si4816BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
www.vishay.com
600
10
5