SI4816BDY-T1-E3 Vishay, SI4816BDY-T1-E3 Datasheet - Page 6
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4816BDY-T1-E3
Manufacturer Part Number
SI4816BDY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4816BDY-T1-GE3.pdf
(10 pages)
Specifications of SI4816BDY-T1-E3
Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.5 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Power - Max
1W, 1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.0185 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.8 A @ Channel 1 or 8.2 A @ Channel 2
Power Dissipation
1000 mW @ Channel 1 or 1250 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5.8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4816BDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4816BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
24 897
Part Number:
SI4816BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.020
0.016
0.012
0.008
0.004
0.000
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 9.5 A
5
V
V
= 15 V
1
V
3
GS
GS
DS
Q
Output Characteristics
= 10 thru 5 V
= 4.5 V
g
– Drain-to-Source Voltage (V)
I
10
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
2
6
3 V
15
4 V
3
9
V
20
GS
= 10 V
2 V
12
4
25
30
15
5
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
0
8
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
0.5
- 25
C
V
I
D
GS
rss
= 9.5 A
V
V
6
DS
= 10 V
1.0
GS
T
Transfer Characteristics
J
C
0
– Drain-to-Source Voltage (V)
– Junction Temperature (°C)
oss
– Gate-to-Source Voltage (V)
1.5
25
Capacitance
12
2.0
S09-0394-Rev. D, 09-Mar-09
T
25 °C
50
C
C
Document Number: 73026
= 125 °C
2.5
iss
18
75
3.0
100
3.5
24
- 55 °C
125
4.0
30
150
4.5