FDG8842CZ Fairchild Semiconductor, FDG8842CZ Datasheet - Page 3

• Manufacturer Part Number: FDG8842CZ
• Description: MOSFET N/P-CH 30V/-25V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG8842CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 25V
• Current - Continuous Drain (id) @ 25° C: 750mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG8842CZTR

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Notes:
Electrical Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
I
V
S
1. R
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
SD
Symbol
R
θJA
θJC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Scale 1:1 on letter size paper.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Parameter
a. 350°C/W when mounted on a
θJA
1 in
is determined by the user's board design.
2
pad of 2 oz copper .
T
J
= 25°C unless otherwise noted
V
V
GS
GS
= 0V, I
= 0V, I
Test Conditions
3
S
S
= 0.3A
= –0.3A
(Note 2)
(Note 2)
b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
Type
Q1
Q2
Q1
Q2
Min
–0.84
Typ
0.76
Max
–0.3
–1.2
www.fairchildsemi.com
0.3
1.2
Units
A
V