FDG8842CZ Fairchild Semiconductor, FDG8842CZ Datasheet - Page 7
![MOSFET N/P-CH 30V/-25V SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG8842CZ
Manufacturer Part Number
FDG8842CZ
Description
MOSFET N/P-CH 30V/-25V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG8842CZ.pdf
(8 pages)
Specifications of FDG8842CZ
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 750mA, 4.5V
Drain To Source Voltage (vdss)
30V, 25V
Current - Continuous Drain (id) @ 25° C
750mA, 410mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.44nC @ 4.5V
Input Capacitance (ciss) @ Vds
120pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG8842CZTR
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
FAIRCHILD
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Manufacturer:
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Manufacturer:
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Manufacturer:
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Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Typical Characteristics(Q2 P-Channel)
0.01
0.1
Figure 19. Gate Charge Characteristics
5
4
3
2
1
0
3
1
0.01
0.0
0.3
0.1
1
I
10
D
SINGLE PULSE
T
R
T
Figure 21. Forward Bias Safe
= -0.41A
-3
J
A
θ
JA
DUTY CYCLE-DESCENDING ORDER
D = 0.5
= MAX RATED
= 25
= 415
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
-V
o
C
DS
0.4
1
V
o
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
DD
C/W
Q
= -5V
g
, GATE CHARGE(nC)
10
-2
0.8
V
DD
= -15V
Figure 23. Transient Thermal Response Curve
10
V
DD
1.2
= -10V
10
-1
100ms
1ms
10ms
1s
DC
t, RECTANGULAR PULSE DURATION (s)
50
1.6
T
J
= 25°C unless otherwise noted
7
10
0
Figure 22. Single Pulse Maximum Power
0.1
200
100
20
10
10
0.001
1
0.1
1
Figure 20. Capacitance vs Drain
f = 1MHz
V
GS
0.01
10
= 0V
-V
NOTES:
DUTY FACTOR: D = t
PEAK T
R
1
to Source Voltage
θ
DS
JA
, DRAIN TO SOURCE VOLTAGE (V)
= 415
Dissipation
J
0.1
t, PULSE WIDTH (s)
= P
o
C/W
DM
1
x Z
P
θJA
1
DM
1
10
/t
x R
2
2
θJA
t
1
10
+ T
t
2
SINGLE PULSE
T
A
R
A
θ
JA
www.fairchildsemi.com
= 25
= 415
C
C
C
100
10
oss
rss
iss
O
C
O
C/W
10
3
1000
25