FDG8842CZ Fairchild Semiconductor, FDG8842CZ Datasheet - Page 7

• Manufacturer Part Number: FDG8842CZ
• Description: MOSFET N/P-CH 30V/-25V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG8842CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 30V, 25V
• Current - Continuous Drain (id) @ 25° C: 750mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG8842CZTR

©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Typical Characteristics(Q2 P-Channel)
0.01
0.1
Figure 19. Gate Charge Characteristics
5
4
3
2
1
0
3
1
0.01
0.0
0.3
0.1
1
I
10
D
SINGLE PULSE
T
R
T
Figure 21. Forward Bias Safe
= -0.41A
-3
J
A
θ
JA
DUTY CYCLE-DESCENDING ORDER
D = 0.5
= MAX RATED
= 25
= 415
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
-V
o
C
DS
0.4
1
V
o
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
DD
C/W
Q
= -5V
g
, GATE CHARGE(nC)
10
-2
0.8
V
DD
= -15V
Figure 23. Transient Thermal Response Curve
10
V
DD
1.2
= -10V
10
-1
100ms
1ms
10ms
1s
DC
t, RECTANGULAR PULSE DURATION (s)
50
1.6
T
J
= 25°C unless otherwise noted
7
10
0
Figure 22. Single Pulse Maximum Power
0.1
200
100
20
10
10
0.001
1
0.1
1
Figure 20. Capacitance vs Drain
f = 1MHz
V
GS
0.01
10
= 0V
-V
NOTES:
DUTY FACTOR: D = t
PEAK T
R
1
to Source Voltage
θ
DS
JA
, DRAIN TO SOURCE VOLTAGE (V)
= 415
Dissipation
J
0.1
t, PULSE WIDTH (s)
= P
o
C/W
DM
1
x Z
P
θJA
1
DM
1
10
/t
x R
2
2
θJA
t
1
10
+ T
t
2
SINGLE PULSE
T
A
R
A
θ
JA
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= 25
= 415
C
C
C
100
10
oss
rss
iss
O
C
O
C/W
10
3
1000
25