SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1539DL-T1-E3
• Description: MOSFET N/P-CH 30V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1539DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 540mA, 420mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.42 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1539DL-T1-E3TR

Notes
a.
b.
www.vishay.com
2-2
Si1539DL
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
V
V
I ^ -0.5 A, V
I
DS
D
V
I
DS
V
D
^ -0.5 A, V
DS
DS
= -15 V, V
^ 0.5 A, V
I
= 15 V, V
I
F
F
V
V
V
V
V
= -24 V, V
V
= 24 V, V
= -0.23 A, di/dt = 100 A/ms
V
V
V
V
I
V
GS
V
= 0.23 A, di/dt = 100 A/ms
DS
V
DS
V
GS
I
S
V
DS
DS
S
DS
DS
DD
DS
GS
DS
GS
DD
DS
= -0.23 A, V
= 0.23 A, V
p -5 V, V
= -10 V, I
= -15 V, I
= V
= 0 V, V
= -4.5 V, I
= V
= -24 V, V
w 5 V, V
= 10 V, I
= 15 V, I
= -15 V, R
= 24 V, V
= 4.5 V, I
= 15 V, R
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
P-Channel
Test Condition
GS
GS
GEN
GEN
GS
GS
GS
GS
, I
, I
= -10 V, I
= 10 V, I
GS
= 0 V, T
D
= 10 V, R
= -10 V, R = 6 W
= -10 V, R
D
= 0 V, T
D
D
D
D
GS
GS
= -250 mA
D
D
GS
GS
= 250 mA
L
GS
= 0.59 A
GS
= 0.59 A
= -0.42 A
L
= "20 V
= -0.42 A
= 0.2 A
= -0.2 A
= 30 W
= 30 W
= 10 V
= -10 V
"
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
W
= 85_C
= 0.59 A
G
W
= 85_C
= -0.42 A
G
= 6 W
= 6 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
-1.0
-1.0
1.0
1.0
S-21374—Rev. B, 12-Aug-02
0.410
0.800
0.600
-0.86
Typ
0.75
0.86
0.24
0.21
0.08
0.17
1.5
0.5
0.8
0.9
15
20
Document Number: 71250
5
4
8
8
8
5
7
7
"100
"100
Max
0.480
0.940
0.700
1.700
-1.2
1.2
1.4
1.4
-1
-5
10
10
15
15
15
10
15
15
30
40
1
5
Unit
nA
m
mA
nC
ns
W
W
V
A
S
V