SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet

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SI1539DL-T1

Manufacturer Part Number
SI1539DL-T1
Description
MOSFET 30 0.63/0.45
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1539DL-T1

Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.63 A, 0.45 A
Resistance Drain-source Rds (on)
0.48 Ohms, 0.94 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
8 ns at N Channel, 8 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
300 mW
Rise Time
8 ns at N Channel, 8 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
8 ns at N Channel, 5 ns at P Channel

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1539DL-T1
Manufacturer:
REALTEK
Quantity:
120
Part Number:
SI1539DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
30
(V)
Ordering Information: Si1539DL-T1-E3 (Lead (Pb)-free)
J
a
1.700 at V
0.940 at V
0.700 at V
0.480 at V
= 150 °C)
a
Complementary 30 V (G-S) MOSFET
R
For more information please contact:
DS(on)
G
S
D
GS
GS
1
1
2
GS
a
GS
()
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
1
2
3
Si1539DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
SC-70 (6-LEADS)
This document is subject to change without notice.
Steady State
Steady State
a
T
T
T
T
SOT-363
A
A
A
A
Top View
t  5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
= 25 °C, unless otherwise noted)
I
- 0.45
- 0.33
D
0.63
0.52
(A)
6
5
4
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
D
G
S
I
I
thJF
GS
DS
D
S
D
2
1
2
stg
pmostechsupport@vishay.com
FEATURES
• TrenchFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
0.63
0.45
0.25
0.30
0.16
5 s
N-Channel
Typical
360
400
300
30
Marking Code
Steady State
®
RC XX
Power MOSFET
0.27
0.14
0.54
0.43
0.23
Part # Code
- 55 to 150
± 20
1
Lot Traceability
and Date Code
- 0.45
- 0.32
- 0.25
0.30
0.16
5 s
P-Channel
Maximum
Vishay Siliconix
- 30
415
460
350
www.vishay.com/doc?91000
Steady State
- 0.42
- 0.31
- 0.23
Si1539DL
0.27
0.14
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1539DL-T1

SI1539DL-T1 Summary of contents

Page 1

... Material categorization: D For definitions of compliance please see = 10 V 0.63 www.vishay.com/doc?99912 = 4.5 V 0.52 - 0.45 - 0.33 SOT-363 SC-70 (6-LEADS Top View Si1539DL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A N-Channel Symbol °C 0. °C 0. 0.25 ...

Page 2

... Si1539DL Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a I On-State Drain Current a R Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... rss 0 0.8 1 1.6 1.4 1.2 1.0 0.8 0.6 0.8 1 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. Si1539DL Vishay Siliconix T = 125 ° °C 25 °C 1.0 1.5 2.0 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss Drain-to-Source Voltage (V) DS ...

Page 4

... Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 °C J 0.1 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage 0.4 0 250 µ 0.2 - 0 100 T - Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 ...

Page 5

... Square Wave Pulse Duration (s) 1.0 0.8 0 0.4 0 0.0 2.5 3 0.8 1.0 pmostechsupport@vishay.com This document is subject to change without notice. Si1539DL Vishay Siliconix ° °C 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss rss 4 8 ...

Page 6

... Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 0. 0.0 0.2 0.4 0 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0.0 0.2 0.4 0.6 0 Source-Drain Diode Forward Voltage ...

Page 7

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration ( Square Wave Pulse Duration (s) pmostechsupport@vishay.com This document is subject to change without notice. Si1539DL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 400 ° ...

Page 8

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 9

... LITTLE MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions ...

Page 10

AN814 Vishay Siliconix SC-70 (6-PIN) Room Ambient 25 _C Elevated Ambient J(max 150 400 312 ...

Page 11

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 12

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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