SI1970DH-T1-E3 Vishay, SI1970DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1970DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1970DH-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 3.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 95pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1970DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
0.6
0.5
0.4
0.3
0.2
0.1
10
8
6
4
2
0
4
3
2
1
0
0.0
0.0
0
I
D
V
GS
= 1.4 A
On-Resistance vs. Drain Current
0.5
0.5
= 2.5 V
V
DS
Output Characteristics
1
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
1.0
D
- Drain Current (A)
Gate Charge
1.0
V
GS
V
= 5 V thru 3.5 V
1.5
DS
2
= 15 V
V
1.5
V
V
DS
V
GS
GS
GS
= 24 V
2.0
= 2 V
= 1.5 V
= 4.5 V
3
V
V
2.0
GS
GS
2.5
= 3 V
= 2.5 V
2.5
3.0
4
150
120
2.0
1.6
1.2
0.8
0.4
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
C
0.5
oss
5
V
Transfer Characteristics
GS
V
T
0
T
J
DS
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
= 125 °C
10
- Drain-Source Voltage (V)
Capacitance
25
T
C
C
iss
= 25 °C
V
1.5
15
50
GS
= 4.5 V, I
Vishay Siliconix
V
GS
75
T
2.0
C
20
= 2.5 V, I
Si1970DH
= - 55 °C
D
100
= 1.4 A
www.vishay.com
2.5
25
D
= 0.3 A
125
150
3.0
30
3