SI1970DH-T1-E3 Vishay, SI1970DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1970DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1970DH-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 3.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 95pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1970DH-T1-E3TR

Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1.0
1.5
1.3
1.1
0.9
0.7
0.5
0.1
10
0.0
- 50
- 25
0.2
V
SD
Forward Diode Voltage
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
T
50
J
= 150 °C
I
D
= 250 µA
75
0.01
0.8
0.1
10
1
0.1
100
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
T
GS
1.0
J
Single Pulse
T
125
= 25 °C
A
= 25 °C
minimum V
V
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS Limited
10
DS(on)
0.8
0.6
0.4
0.2
0.0
0.01
5
4
3
2
1
0
is specified
0
1 s, 10 s
100 µs
1 ms
10 ms
100 ms
DC
On-Resistance vs. Gate-Source Voltage
100
0.1
1
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
2
1
Time (s)
S10-0721-Rev. B, 29-Mar-10
Document Number: 74343
3
10
I
T
D
A
T
= 1.4 A
A
= 125 °C
= 25 °C
4
100
600
5