SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 4
![MOSFET N/P-CH 20V 1.4/.96A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3850ADV-T1-E3
Manufacturer Part Number
SI3850ADV-T1-E3
Description
MOSFET N/P-CH 20V 1.4/.96A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3850ADV-T1-E3.pdf
(9 pages)
Specifications of SI3850ADV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.4A, 960mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Power - Max
1.08W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.4 A @ N Channel or 0.96 A @ P Channel
Power Dissipation
1080 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
240mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3850ADV-T1-E3TR
Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
0.001
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.01
0.2
0.1
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
V
SD
0
Threshold Voltage
T
– Source-to-Drain Voltage (V)
J
– Temperature (°C)
25
150 °C
0.6
50
0.9
25 °C
75
0.01
I
D
0.1
10
= 250 µA
*Limited by r
1
0.1
100
* V
1.2
I
D
GS
Single Pulse
= 5 mA
T
125
A
= 25 °C
DS(on)
V
minimum V
DS
150
1.5
– Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BV
DSS
at which r
Limited
DS(on)
10
is specified
1.5
1.2
0.9
0.6
0.3
0.0
24
18
12
30
0.001
6
0
100 ms
1 ms
10 ms
10 s
dc
1 s
0
On-Resistance vs. Gate-to-Source Voltage
100
V
1
0.01
GS
Single Pulse Power
– Gate-to-Source Voltage (V)
Time (sec)
2
25 °C
S-60470-Rev. A, 27-Mar-06
0.1
Document Number: 73789
3
125 °C
1
4
10
5