si3850adv Vishay, si3850adv Datasheet
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si3850adv
Manufacturer Part Number
si3850adv
Description
Complementary Mosfet Half-bridge N- And P-channel
Manufacturer
Vishay
Datasheet
1.SI3850ADV.pdf
(9 pages)
Notes:
Maximum under Steady State condition is 150 °C/W.
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,
± ≤ 10 sec)
PRODUCT SUMMARY
N-Channel
P-Channel
Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)
G
G
D
1
2
Complementary MOSFET Half-Bridge (N- and P-Channel)
V
1
2
3
Top View
TSOP-6
DS
- 20
20
(V)
6
5
4
J
0.640 at V
0.980 at V
0.300 at V
0.410 at V
= 150 °C)
r
DS(on)
S
S
D
1
2
GS
GS
GS
GS
(Ω)
= - 4.5 V
= - 3.0 V
= 4.5 V
= 3.0 V
a
A
= 25 °C, unless otherwise noted
I
- 0.96
- 0.78
D
T
T
T
T
1.4
1.2
A
A
A
A
(A)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• 100 % R
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
I
I
thJA
DS
GS
D
S
D
stg
g
Tested
N-Channel
G
G
2
1
1.4
1.1
3.5
0.9
20
N- or P-Channel
- 55 to 150
± 12
S
S
1.08
0.70
115
2
1
Vishay Siliconix
P-Channel
Si3850ADV
D
- 0.96
- 0.77
- 2.0
- 0.9
- 20
www.vishay.com
RoHS
COMPLIANT
°C/W
Unit
Unit
°C
W
V
A
1