FDS9926A Fairchild Semiconductor, FDS9926A Datasheet
FDS9926A
Manufacturer Part Number
FDS9926A
Description
MOSFET N-CH DUAL 20V 6.5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9926A.pdf
(5 pages)
Specifications of FDS9926A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
6.5 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9926ATR
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FDS9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
2003 Fairchild Semiconductor Corp.
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery protection
Load switch
Power management
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS9926A
Semiconductor’s
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
advanced
– Continuous
– Pulsed
FDS9926A
Device
Parameter
PowerTrench
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
6.5 A, 20 V.
Optimized for use in battery protection circuits
Low gate charge
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
12mm
Q1
Q2
Ratings
6.5
1.6
0.9
20
20
78
40
10
2
1
= 30 m
= 43 m
@ V
@ V
4
3
2
1
GS
GS
July 2003
= 4.5 V
= 2.5 V.
FDS9926A Rev E (W)
2500 units
Quantity
Units
C/W
W
V
A
C
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Datasheet:
FDS9926A Summary of contents
Page 1
... Optimized for use in battery protection circuits Low gate charge =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ July 2003 4.5 V DS(ON 2.5 V. DS(ON Ratings Units 6 1.6 1 0.9 –55 to +150 C 78 C/W 40 Tape width Quantity 12mm 2500 units FDS9926A Rev E (W) ...
Page 2
... CA b) 125°/W when mounted pad copper Min Typ Max Units mV 100 0.6 1 1.5 V –3 mV 650 pF 150 1 6 1.2 nC 1.7 nC 0.73 1 135°/W when mounted on a minimum pad. Scale letter size paper FDS9926A Rev E (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4.0V 4. DIRAIN CURRENT ( 3.25A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS9926A Rev E ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS9926A Rev E (W) 20 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...