FDS9926A Fairchild Semiconductor, FDS9926A Datasheet - Page 2

• Manufacturer Part Number: FDS9926A
• Description: MOSFET N-CH DUAL 20V 6.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9926A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9926ATR

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
V
t
Q
I
DSS
GSS
d(on)
r
d(off)
f
rr
D(on)
the drain pins. R
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
G
SD
g
gs
gd
rr
GS(th)
JA
DSS
T
T
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a) 78°/W when
mounted on a 0.5in
pad of 2 oz copper
Parameter
(Note 2)
(Note 2)
2
CA
is determined by the user's board design.
T
A
= 25°C unless otherwise noted
b) 125°/W when
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
D
D
F
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
GS
= 6.5 A,
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
mounted on a 0.02
in
copper
2
= 4.5 V, I
= 0 V,
= 16 V,
= 8 V,
= V
= 4.5 V, I
= 2.5 V, I
= 4.5 V,
= 5 V,
= 10 V, V
= 10 V,
= 4.5 V, R
= 10 V,
= 4.5 V
= 0 V,
= 15 mV, f = 1.0 MHz
pad of 2 oz
Test Conditions
GS
,
D
I
d
S
I
V
V
I
I
iF
=6.5A, T
D
D
D
D
I
I
D
V
= 1.3 A
/d
D
D
GS
DS
GS
= 250 A
= 250 A
= 6.5 A
= 5.4 A
GEN
= 3 A,
DS
= 6.5 A
= 1 A,
t
= 0 V
= 100 A/µs
= 0 V
= 0 V,
= 5 V
= 6
J
=125 C
(Note 2)
Min
0.6
20
15
c) 135°/W when mounted on a
Scale 1 : 1 on letter size paper
minimum pad.
Typ Max Units
0.73
650
150
1.4
6.2
1.2
1.7
14
–3
25
35
35
22
85
15
15
1
8
9
4
5
1.5
1.3
100
30
43
50
16
17
26
FDS9926A Rev E (W)
1
9
9
mV/ C
mV/ C
m
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
S
V
A