FDS8333C Fairchild Semiconductor, FDS8333C Datasheet
FDS8333C
Specifications of FDS8333C
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FDS8333C Summary of contents
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... Reel Size 7’’ August 2002 = DS(ON 130 4.5 V DS(ON 130 –10 V DS(ON 200 –4.5 V DS(ON Units 30 – 4.1 –3 – 0.9 –55 to +150 C 78 C/W 40 Tape width Quantity 12mm 2500 units FDS8333C Rev C (W) ...
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... Typ Max Units 30 V –30 25 mV/ C – –1 nA 100 nA 100 1 1 –1 –1.8 –3 –4.2 mV 130 81 145 103 105 130 200 167 220 147 10 A – 282 pF 185 2.3 –9 4.7 6.6 nC 4.1 5.7 0.9 nC 0.8 0.6 nC 0.4 FDS8333C Rev C (W) ...
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... A/µ –3 100 A/µ determined by the user's board design 125°C/W when mounted 0.02 in pad copper Min Typ Max Units 0.8 1.2 (Note 2) V 0.8 –1.2 (Note 2) 16.3 nS 14.5 26.7 nC 21.1 c) 135°C/W when mounted on a minimum pad. FDS8333C Rev C (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS8333C Rev C ( 1.2 ...
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... DS 10V 15V 300 200 100 C RSS Figure 8. Capacitance Characteristics 100 s 1ms 10ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. FDS8333C Rev C (W) 30 1000 ...
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... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.0V -6.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS8333C Rev C ( 1.4 ...
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... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS8333C Rev C (W) 30 1000 ...
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