FDS8333C Fairchild Semiconductor, FDS8333C Datasheet - Page 6

• Manufacturer Part Number: FDS8333C
• Description: MOSFET N/P-CH 30V 4.1/3.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8333C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 282pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V @ N Channel or +/- 20 V @ P Channel
• Continuous Drain Current: 4.1 A @ N Channel or 3.4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: P-Channel
5
4
3
2
1
0
10
1.5
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
1
0
Figure 11. On-Region Characteristics.
-50
V
Figure 15. Transfer Characteristics.
Figure 13. On-Resistance Variation
GS
V
V
= -10V
I
D
D S
GS
= -3.4A
-25
= -5V
=-10V
1
-V
GS
-V
withTemperature.
-6.0V
T
0
, GATE TO SOURCE VOLTAGE (V)
DS
J
, JUNCTION TEMPERATURE (
2.5
, DRAIN-SOURCE VOLTAGE (V)
25
2
50
-4.5V
T
A
= -55
3
o
75
C
3.5
-4.0V
125
o
100
C)
o
-3.5V
C
4
25
o
C
125
150
4.5
5
Figure 16. Body Diode Forward Voltage Variation
0.0001
0.4
0.3
0.2
0.1
0.001
0.01
0
2.5
1.5
0.5
0.1
1 0
2
3
2
1
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
1
with Source Current and Temperature.
0
0
V
GS
Drain Current and Gate Voltage.
= -3.5V
V
GS
0.2
-V
Gate-to-Source Voltage.
= 0V
2
-V
SD
4
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
T
A
A
, GATE TO SOURCE VOLTAGE (V)
0.4
= 25
= 125
-4.0V
-I
D
o
, DRAIN CURRENT (A)
C
o
C
4
0.6
-4.5V
25
6
o
C
T
A
0.8
-5.0V
= 125
6
-55
o
o
C
-6.0V
C
1
8
I
FDS8333C Rev C (W)
8
D
= -1.7A
1.2
-10V
10
1.4
10