FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 4

• Manufacturer Part Number: FDJ1032C
• Description: MOSFET N/P-CH 20V FLMP SC-75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 3.2 A @ N Channel or 2.8 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDJ1032C Rev. B2(W)
Typical Characteristics : Q1
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
10
8
6
4
2
0
1
5
4
3
2
1
0
Figure 3. On-Resistance Variation with
-50
0.5
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
V
DS
GS
I
D
GS
=-4.5V
= -5V
= -2.8A
= -4.5V
-25
1
-V
-V
T
DS
1
0
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
-3.5V
Temperature.
25
2
1.5
50
-3.0V
T
A
3
75
= -55°C
-2.5V
100
2
125 °C
4
-2.0V
-1.8V
125
25 °C
2.5
150
5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.44
0.38
0.32
0.26
0.14
0.08
100
0.1
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.5
0.2
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
1.5
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
T
A
=-1.8V
=0V
= 25°C
2
Gate-to-Source Voltage.
0.2
-2.0V
-V
2
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
-2.5V
T
GS
A
2.5
= 125°C
, GATE TO SOURCE VOLTAGE (V)
-I
0.4
D
T
, DRAIN CURRENT (A)
-3.0V
A
= 125°C
25°C
4
3
0.6
-3.5V
-55°C
3.5
6
0.8
-4.0V
4
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I
D
8
= -1.4A
4.5
1
-4.5V
5
10
1.2