FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 8

• Manufacturer Part Number: FDJ1032C
• Description: MOSFET N/P-CH 20V FLMP SC-75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 3.2 A @ N Channel or 2.8 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDJ1032C Rev. B2(W)
Dimensional Outline and Pad Layout
DRAIN 1
PKG
PKG
C L
PKG
PKG
(0.46)
SEATING
PLANE
(0.20)
0.30
0.20
C L
DRAIN
C L
0.50
0.80
0.65
1
6
1
Bottom View
6
Top View
PKG
C L
PKG
1.00
1.70
1.50
C L
0.225
0.075
4
3
4
3
(0.50)
0.275
0.125
A
1.075
0.925
(0.73)
DRAIN 2
(0.24)
0.075 M A B
1.75
1.55
PKG
2.15
1.85
B
C L
(0.18)
8
Notes: Unless otherwise specified all dimensions are in millimeters.
TERMINAL
DRAIN 1
0.84
Recommended Landing Pattern
0.30 MIN
0.20
PKG
0.60
C L
0.50
6
1
PKG
1.00
C L
4
3
1.35
0.50 MIN
DRAIN 2
TERMINAL
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2.35 MIN