FDS9953A Fairchild Semiconductor, FDS9953A Datasheet - Page 2

• Manufacturer Part Number: FDS9953A
• Description: MOSFET P-CH DUAL 30V 2.9A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9953A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 185pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
DSS
GSSF
GSSR
D(on)
S
d(on)
r
d(off)
f
rr
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
DSS
GS(th)
T
T
DSS
J
J
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Parameter
(Note 2)
(Note 2)
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
dI
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
GS
F
T
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
/dt = 100A/ s
A
= 25°C unless otherwise noted
= 0 V, I
= –24 V,
= –25 V,
= 25 V,
= V
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.5 V, I
= –10 V,
= –4.5 V,
= –15 V,
= –15 V,
= –15 V,
= –10 V,
= –5 V,
= –10 V
= 0 V, I
= 0 V, I
GS
Test Conditions
, I
D
F
D
= –1.25A,
= –250 A
S
= –250 A
D
D
D
D
= –1.3 A
= –1 A
= –1 A, T
= –0.5 A
= –0.5 A, T
V
V
V
V
I
D
V
V
I
R
D
I
GS
DS
DS
D
GS
GEN
= –1 A,
DS
DS
= –1 A,
= –1 A
= 0 V
= 0 V
= 0 V
= 0 V,
= –5 V
= –5 V
= 6
J
=125 C
(Note 2)
J
=125 C
Min
–1.5
–30
–1
–5
Typ Max Units
–1.8
–0.8
–23
137
142
202
185
4.5
2.5
0.8
0.9
95
56
26
13
11
17
4
4
2
–100
–3.0
–1.2
100
130
200
200
310
100
3.5
1.3
–2
23
20
9
4
FDS9953A Rev B(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
nS
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A