FDD8424H Fairchild Semiconductor, FDD8424H Datasheet

MOSFET DUAL N/P-CH 40V TO252-4L

FDD8424H

Manufacturer Part Number
FDD8424H
Description
MOSFET DUAL N/P-CH 40V TO252-4L
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8424H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A, 6.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (4 leads + tab)
Configuration
Dual Common Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A @ N Channel or 6.5 A @ P Channel
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Module Configuration
Dual
Continuous Drain Current Id
9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Fall Time
6 ns, 3 ns
Rise Time
13 ns, 3 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8424HTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8424H
Manufacturer:
FAIRCHILD
Quantity:
3 789
Part Number:
FDD8424H
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDD8424H
Quantity:
20 203
Company:
Part Number:
FDD8424H
Quantity:
126
©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
FDD8424H
Dual N & P-Channel PowerTrench
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Features
Q1: N-Channel
Q2: P-Channel
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
E
T
R
R
D
DS
GS
D
AS
J
θJC
θJC
Max r
Max r
Max r
Max r
Fast switching speed
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD8424H
DS(on)
DS(on)
DS(on)
DS(on)
= 24mΩ at V
= 30mΩ at V
= 54mΩ at V
= 70mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
D1/D2
Dual DPAK 4L
GS
GS
GS
GS
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
FDD8424H
Device
- Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
- Pulsed
D
D
D
S1
D
= 9.0A
= 7.0A
= -6.5A
G1
= -5.6A
S2
G2
T
C
= 25°C unless otherwise noted
Parameter
TO-252-4L
Package
®
1
MOSFET
General Description
These dual N and P-Channel enhancement
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
G1
T
T
T
T
T
C
A
A
C
A
= 25°C (Note 1a)
= 25°C (Note 1b)
= 25°C
= 25°C
= 25°C
Reel Size
N-Channel
13”
(Note 1)
(Note 1)
(Note 1)
(Note 3)
S1
D1
G2
Tape Width
±20
Q1
9.0
12mm
40
20
26
55
30
29
P-Channel
-55 to +150
D2
4.1
3.5
3.1
1.3
S2
±20
-6.5
Q2
-40
-20
-20
-40
March 2007
35
33
www.fairchildsemi.com
2500 units
mode Power
Quantity
Units
°C/W
mJ
°C
W
V
V
A
tm

Related parts for FDD8424H

FDD8424H Summary of contents

Page 1

... Thermal Resistance, Junction to Case, Single Operation for Q2 θJC Package Marking and Ordering Information Device Marking Device FDD8424H FDD8424H ©2007 Fairchild Semiconductor Corporation FDD8424H Rev.C ® MOSFET General Description These dual N and P-Channel enhancement MOSFETs are produced using Fairchild Semiconductor’s = 9.0A D advanced PowerTrench- process that has been especially = 7 ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J Test Conditions I = 250µ -250µ 250µA, referenced to 25°C ...

Page 3

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting T = 25°C, N-ch 0.3mH 14A ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J Test Conditions ...

Page 4

... T J Figure 3. Normalized On -Resistance vs Junction Temperature 60 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted 4.0V GS µ 3. 3. 100 125 150 0. - ...

Page 5

... T = MAX RATED 4.1 C/W θ 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J 2000 1000 V = 20V DD = 25V 100 Figure 10. Maximum Continuous Drain 10000 10us 100us 1000 100 1ms 10ms ...

Page 6

... Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 4.1 C/W θ JC 0.005 - ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK ...

Page 7

... Fairchild Semiconductor Corporation FDD8424H Rev.C 7 www.fairchildsemi.com ...

Page 8

... Junction Temperature 40 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX V = -4. - -3. - Figure 15. Normalized on-Resistance vs Drain 160 120 50 75 ...

Page 9

... LIMITED BY r ds(on) 1 SINGLE PULSE T = MAX RATED 3.5 C/W θ 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24 . Forward Bias Safe Operating Area ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J 2000 1000 V = -20V -25V DD 100 100 10000 10us 100us 1000 1ms ...

Page 10

... Typical Characteristics (Q2 P-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 3.5 θ JC 0.005 - ©2007 Fairchild Semiconductor Corporation FDD8424H Rev 25°C unless otherwise noted J C RECTANGULAR PULSE DURATION (s) Figure 26. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK T ...

Page 11

... Fairchild Semiconductor Corporation FDD8424H Rev.C 11 www.fairchildsemi.com ...

Page 12

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDD8424H Rev.C HiSeC™ Programmable Active Droop™ ® i-Lo™ QFET ImpliedDisconnect™ QS™ IntelliMAX™ QT Optoelectronics™ ISOPLANAR™ ...

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