FDD8424H Fairchild Semiconductor, FDD8424H Datasheet - Page 8

• Manufacturer Part Number: FDD8424H
• Description: MOSFET DUAL N/P-CH 40V TO252-4L
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8424H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A @ N Channel or 6.5 A @ P Channel
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Module Configuration: Dual
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Fall Time: 6 ns, 3 ns
• Rise Time: 13 ns, 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8424HTR

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Typical Characteristics (Q2 P-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
0
Figure 14. On- Region Characteristics
-75
0
Figure 16. Normalized On-Resistance
0
1
Figure 18. Transfer Characteristics
V
I
D
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
V
DS
= -6.5A
-50
= -10V
= -5V
V
vs Junction Temperature
GS
-V
T
-V
-25
J
T
= -10V
DS
,
J
GS
JUNCTION TEMPERATURE (
= 150
, DRAIN TO SOURCE VOLTAGE (V)
1
2
,
GATE TO SOURCE VOLTAGE (V)
0
o
C
25
µ
s
2
3
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
50
J
= -55
75
o
C
o
100 125 150
3
C )
4
V
V
V
V
T
GS
GS
GS
J
GS
= 25
= -4.5V
= -4V
= -3.5V
= -3V
o
µ
C
s
4
5
T
J
= 25°C unless otherwise noted
8
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
160
120
0.1
3.0
2.5
2.0
1.5
1.0
0.5
40
10
80
40
1
0
0.0
2
0
Figure 17. On-Resistance vs Gate to
Forward Voltage vs Source Current
V
Figure 19. Source to Drain Diode
V
GS
T
GS
J
= 0V
-V
= 150
Current and Gate Voltage
= -3V
SD
-V
0.3
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
o
GS
C
, GATE TO SOURCE VOLTAGE (V)
10
4
= -3.5V
Source Voltage
I
D
- I
= -6.5A
D
, DRAIN CURRENT(A)
0.6
V
V
GS
GS
20
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
= -4V
= -10V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
T
J
J
0.9
J
= 125
= 25
V
= -55
GS
T
o
J
C
o
= -4.5V
= 25
o
C
C
30
8
o
1.2
C
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µ
s
µ
s
1.5
40
10