FDS6990A Fairchild Semiconductor, FDS6990A Datasheet
FDS6990A
Manufacturer Part Number
FDS6990A
Description
MOSFET N-CH DUAL 30V 7.5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6990A.pdf
(5 pages)
Specifications of FDS6990A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
1235pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6990ATR
Available stocks
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Part Number
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Quantity
Price
Company:
Part Number:
FDS6990A
Manufacturer:
Fairchild Semiconductor
Quantity:
63 203
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Part Number:
FDS6990A
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FSC
Quantity:
10 669
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FDS6990A
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FAIRCHILD/仙童
Quantity:
20 000
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Part Number:
FDS6990A-NL
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FAIRCHILD
Quantity:
50 000
Part Number:
FDS6990A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6990AS
Manufacturer:
INFINEON
Quantity:
60
Part Number:
FDS6990AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6990AS-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6990A
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6990A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6990A
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
7.5 A, 30 V.
Fast switching speed
Low gate charge
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
7.5
1.6
1.0
0.9
30
20
78
40
20
= 18 m
= 23 m
4
3
2
1
@ V
@ V
June 2003
GS
GS
FDS6990A Rev D(W)
2500 units
Quantity
= 10 V
= 4.5 V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6990A Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ June 2003 DS(ON 4.5 V DS(ON Ratings Units 7 1.6 1.0 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6990A Rev D(W) ...
Page 2
... 100 A/µ determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV 100 1 1 –4 mV 1235 pF 295 pF 120 pF 2 3.5 nC 4.2 nC 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6990A Rev D(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.5V GS 4.0V 4.5V 5.0V 6.0V 10. DRAIN CURRENT ( 3.75A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6990A Rev D( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6990A Rev D(W) 20 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...