FDS6990A Fairchild Semiconductor, FDS6990A Datasheet - Page 3

• Manufacturer Part Number: FDS6990A
• Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6990A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 1235pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990ATR

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
20
16
12
20
16
12
8
4
0
8
4
0
Figure 3. On-Resistance Variation with
1
1.5
-50
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
V
V
GS
I
GS
DS
D
-25
= 10.0V
= 7.5A
4.5V
= 10.0V
= 5V
V
V
0.5
DS
T
GS
2
0
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
4.0V
25
3.5V
T
A
2.5
1
= 125
50
o
C
75
3.0V
25
o
C
1.5
100
o
C)
3
-55
o
125
C
150
2
3.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.05
0.04
0.03
0.02
0.01
0.001
0.01
1.8
1.6
1.4
1.2
0.8
100
Figure 2. On-Resistance Variation with
0
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
2
1
0
0
T
Drain Current and Gate Voltage.
A
V
= 25
GS
V
GS
= 0V
o
C
Gate-to-Source Voltage.
= 3.5V
0.2
V
SD
4
V
GS
, BODY DIODE FORWARD VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
T
4.0V
T
A
A
= 125
= 125
I
0.4
D
, DRAIN CURRENT (A)
4.5V
o
8
C
o
C
6
0.6
5.0V
25
o
C
12
6.0V
0.8
-55
8
o
C
16
10.0V
FDS6990A Rev D(W)
I
D
1
= 3.75A
10
20
1.2