SI4500BDY-T1-E3 Vishay, SI4500BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4500BDY-T1-E3
• Description: MOSFET N/P-CH HALF BRG 20V 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Common Quad Drain
• Resistance Drain-source Rds (on): 0.02 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.6 A @ N Channel or 3.8 A @ P Channel
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
25
20
15
10
5
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 9.1 A
V
5
2
V
GS
1
GS
= 10 V
V
DS
= 2.5 V
= 5 V thru 3 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
10
D
4
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
2
15
6
2.5 V
3
20
8
V
GS
4
= 4.5 V
25
10
1.5 V
2 V
30
12
5
1600
1400
1200
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
rss
GS
0.5
= 9.1 A
4
= 4.5 V
V
V
DS
GS
Transfer Characteristics
0
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
C
25
oss
Capacitance
T
25 °C
8
C
= 125 °C
C
50
1.5
Vishay Siliconix
iss
Si4500BDY
12
75
- 55 °C
2.0
www.vishay.com
100
16
2.5
125
150
3.0
20
3