SI4500BDY-T1-E3 Vishay, SI4500BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4500BDY-T1-E3
• Description: MOSFET N/P-CH HALF BRG 20V 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Common Quad Drain
• Resistance Drain-source Rds (on): 0.02 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.6 A @ N Channel or 3.8 A @ P Channel
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-E3TR

Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
30
10
0.0
0
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
0
T
J
- Source-to-Drain V oltage (V)
Threshold Voltage
= 150 °C
I
T
D
J
= 250 µA
25
- Temperature (°C)
0.6
50
0.9
T
75
J
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.2
Limited by R
* V
Limited
125
I
D(on)
GS
Single Pulse
T
A
> minimum V
1.5
= 25 °C
150
V
DS
(DS)on
Safe Operating Area
- Drain-to-Source Voltage (V)
1
*
BVDSS Limited
GS
at which R
DS(on)
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
I
80
70
60
50
40
30
20
10
DM
0.001
0
0
is specified
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
On-Resistance vs. Gate-to-Source Voltage
0.01
I
D
= 3.3 A
1
V
100
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
0.1
2
Time (s)
I
D
S09-0705-Rev. D, 27-Apr-09
= 9.1 A
1
Document Number: 72281
3
10
4
100
600
5